Researchers at the National Institute of Advanced Industrial Science and Technology have demonstrated the enhanced performance and high reliability of tunnel transistors (tunnel FETs), which are ...

Engineers considermany forms ofcurrent leakagein electronicsystems tobe unusable.This thinkingis starting to change asdesigners begin to explorenew frontiers in ultra-low-powerdevices through ...

Engineers at the University of California, Santa Barbara, working with Rice University, have demonstrated a transistor that switches at 0.1V and which is said to consume less than 10% of the power ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...